Seri tabung tunggal 905nmAPD
Karakteristik fotolistrik (@Ta=22±3℃) | |||||||||
Model | GD5210Y-2-2-T046 | GD5210Y-2-5-T046 | GD5210Y-2-8-T046 | GD5210Y-2-2-LCC3 | GD5210Y-2-5-LCC3 | GD5210Y-2-2-P | GD5210Y-2-5-P | Array | |
wangun paket | TO-46 | TO-46 | TO-46 | LCC3 | LCC3 | kemasan plastik | kemasan plastik | PCB | |
Diameter permukaan fotosensitif (mm) | 0.23 | 0.50 | 0.80 | 0.23 | 0.50 | 0.23 | 0.50 | disesuaikan | |
Range respon spektral (nm) | 400~1100 | 400~1100 | 400~1100 | 400~1100 | 400~1100 | 400~1100 | 400~1100 | 400~1100 | |
Panjang gelombang respon puncak (nm) | 905 | 905 | 905 | 905 | 905 | 905 | 905 | 905 | |
Responsiveness λ=905nm Φ=1μW M=100 (A/W) | 55 | 55 | 55 | 55 | 55 | 55 | 55 | 55 | |
Arus peteng M=100(nA) | Khas | 0.2 | 0.4 | 0.8 | 0.2 | 0.4 | 0.2 | 0.4 | Miturut photosensitivity |
maksimal | 1.0 | 1.0 | 2.0 | 1.0 | 1.0 | 1.0 | 1.0 | Siji sisih | |
Wektu nanggepi λ=905nm R1=50Ω(ns) | 0.6 | 0.6 | 0.6 | 0.6 | 0.6 | 0.6 | 0.6 | Miturut lumahing fotosensitif | |
Koefisien suhu voltase kerja T = -40 ℃ ~ 85 ℃ (V / ℃) | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | |
Total kapasitansi M=100 f=1MHz(pF) | 1.0 | 1.2 | 2.0 | 1.0 | 1.2 | 1.0 | 1.2 |
Miturut lumahing fotosensitif | |
voltase risak IR = 10μA(V) | minimal | 130 | 130 | 130 | 130 | 130 | 130 | 130 | 160 |
maksimal | 220 | 220 | 220 | 220 | 220 | 220 | 220 | 200 |
Struktur Chip Plane ngarep
Tanggepan kacepetan dhuwur
gain dhuwur
Kapasitas persimpangan kurang
Kurang swara
Ukuran array lan permukaan fotosensitif bisa disesuaikan
Laser ranging
Lidar
Laser warning