Seri tabung tunggal 1064nmAPD
| Karakteristik fotolistrik (＠Ta＝22±3℃) | |||||
| Model | GD5210Y-3-500 | GD5210Y-3-800 | GD5211Y | ||
| wangun paket | TO-46 | TO-46 | TO-52 | ||
| Diameter permukaan fotosensitif (mm) | 0.5 | 0.8 | 0.8 | ||
| Range respon spektral (nm) | 400~1100 | 400~1100 | 400~1100 | ||
| Panjang gelombang respon puncak (nm) | 980 | 980 | 980 | ||
| Responsiveness | λ=905nm Φ=1μW M=100 | 58 | 58 | 58 | |
| λ=1064nm Φ=1μW M=100 | 36 | 36 | 36 | ||
| Arus peteng M=100 (nA) | Khas | 2 | 4 | 10 | |
| maksimal | 20 | 20 | 20 | ||
| Wektu nanggapi λ=800nm R1=50Ω(ns) | 2 | 3 | 3.5 | ||
|
Koefisien suhu voltase kerja T = -40 ℃ ~ 85 ℃ (V / ℃) | 2.2 | 2.2 | 2.2 | ||
| Total kapasitansi M=100 f=1MHz(pF) | 1.0 | 1.5 | 3.5 | ||
| Tegangan rusak IR = 10μA(V) | minimal | 220 | 220 | 350 | |
| maksimal | 580 | 580 | 500 | ||
Struktur Chip Plane ngarep
Frekuensi respon dhuwur
gain dhuwur
Laser ranging
Lidar
Laser warning
Struktur Chip Plane ngarep
Frekuensi respon dhuwur
gain dhuwur
Laser ranging
Lidar
Laser warning
