Seri tabung tunggal 800nmAPD
| Karakteristik fotolistrik (＠Ta＝22±3℃) | |||||
| Model | GD5210Y-1-2-T046 | GD5210Y-1-5-T046 | GD5210Y-1-2-LCC3 | GD5210Y-1-5 -LCC3 | |
| wangun paket | TO-46 | TO-46 | LCC3 | LCC3 | |
| Diameter permukaan fotosensitif (mm) | 0.23 | 0.50 | 0.23 | 0.50 | |
| Range respon spektral (nm) | 400~1100 | 400~1100 | 400~1100 | 400~1100 | |
| Panjang gelombang respon puncak (nm) | 800 | 800 | 800 | 800 | |
| λ=800nm Φ=1μW M=100(A/W) | 55 | 55 | 55 | 55 | |
| Arus peteng | Khas | 0.05 | 0.10 | 0.05 | 0.10 |
| M=100 (nA) | maksimal | 0.2 | 0.4 | 0.2 | 0.4 |
| Wektu nanggapi λ=800nm R1=50Ω(ns) | 0.3 | 0.3 | 0.3 | 0.3 | |
| Koefisien suhu voltase kerja T = -40 ℃ ~ 85 ℃ (V / ℃) | 0.5 | 0.5 | 0.5 | 0.5 | |
| Total kapasitansi M=100 f=1MHz(pF) | 1.5 | 3.0 | 1.5 | 3.0 | |
| Tegangan rusak IR = 10μA (V) | minimal | 80 | 80 | 80 | 80 |
| maksimal | 160 | 160 | 160 | 160 | |
Struktur Chip Plane ngarep
Tanggepan kacepetan dhuwur
gain dhuwur
Kapasitas persimpangan kurang
Kurang swara
Laser ranging
Lidar
Laser warning
