seri modul InGaAS-APD
| Karakteristik fotolistrik (＠Ta＝22±3℃) | |||
| Model | GD6510Y | GD6511Y | GD6512Y |
| wangun paket | TO-8 | TO-8 | TO-8 |
| Diameter permukaan fotosensitif (mm) | 0.2 | 0.5 | 0.08 |
| Range respon spektral (nm) | 1000~1700 | 1000~1700 | 1000~1700 |
| Tegangan rusak (V) | 30~70 | 30~70 | 30~70 |
| Tanggung jawab M=10 l=1550nm(kV/W) | 340 | 340 | 340 |
| Wektu munggah (ns) | 5 | 10 | 2.3 |
| Bandwidth (MHz) | 70 | 35 | 150 |
| Daya gangguan sing padha (pW/√Hz) | 0.15 | 0.21 | 0.11 |
| Koefisien suhu voltase kerja T = -40 ℃ ~ 85 ℃ (V / ℃) | 0.12 | 0.12 | 0.12 |
| Konsentris (μm) | ≤50 | ≤50 | ≤50 |
| Model alternatif kanthi kinerja sing padha ing saindenging jagad | C3059-1550-R2A | / | C3059-1550-R08B |
Struktur Chip Plane ngarep
Respon cepet
Sensitivitas detektor dhuwur
Laser ranging
Lidar
Laser warning
Struktur Chip Plane ngarep
Respon cepet
Sensitivitas detektor dhuwur
Laser ranging
Lidar
Laser warning
